4H-SIC SINGLE CRYSTAL GROWTH METHOD AND GROWTH APPARATUS
摘要
PURPOSE: A 4H-SiC single crystal growing method and a growing apparatus are provided to grow various kinds of single crystal by differently setting a growth temperature. CONSTITUTION: A seed(130) is attached to a seed holder(120). The seed holder downwardly mounts the seed on the inner upper side of a crucible(110) installed in a reaction chamber. SiC powder that is a single crystal raw material(170) is inputted to the crucible. Single crystal raw materials are sublimated by heating and decompressing the crucible. The crucible has a length of 150 to 160 mm.
申请公布号
KR20120139398(A)
申请公布日期
2012.12.27
申请号
KR20110059185
申请日期
2011.06.17
申请人
DONG-EUI UNIVERSITY INDUSTRY-ACADEMIC COOPERATIONFOUNDATION
发明人
LEE, WON JAE;PARK, JONG HWI;YANG, TAE KYUNG;RYU, HEUI BUM;LEE, SANG IL