发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor device may include a semiconductor substrate with an active region, a gate line disposed on the active region, an epitaxial pattern disposed on the semiconductor substrate beside the gate line, the epitaxial pattern including a semiconductor material different from the semiconductor substrate, and a capping pattern disposed on the epitaxial pattern. The capping pattern may improve contact with contact plug and may reduce variation in mean ion depths of an associated field effect transistor.
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申请公布号 |
US2012329252(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201213529564 |
申请日期 |
2012.06.21 |
申请人 |
YOO WONSEOK;KIM NAM-KYU;KIM BONGHYUN;LEE SEUNG HUN;HWANG HEEDON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOO WONSEOK;KIM NAM-KYU;KIM BONGHYUN;LEE SEUNG HUN;HWANG HEEDON |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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