发明名称 METHOD AND APPARATUS FOR VAPOR DEPOSITION
摘要 <p>A method and apparatus for vapor deposition employing a conductive, three- dimensional, open cell, reticulated structure having a solid coating of a material that was previously vapor deposited thereon. The solid coating is vaporized to form a deposition gas. A carrier gas is flowed though the three-dimensional, open cell, reticulated structure to yield a controllable partial pressure of the deposition gas thereby forming a mixture of the carrier gas and the deposition gas. The mixture is delivered at a stable flow rate to a temperature controlled substrate. The deposition gas condenses on the surface of the temperature controlled substrate.</p>
申请公布号 WO2012175126(A1) 申请公布日期 2012.12.27
申请号 WO2011EP60469 申请日期 2011.06.22
申请人 AIXTRON SE;LONG, MICHAEL;GERSDORFF, MARKUS;GOPI, BASKAR PAGADALA 发明人 LONG, MICHAEL;GERSDORFF, MARKUS;GOPI, BASKAR PAGADALA
分类号 C23C14/12;C23C14/22;C23C14/24;H01L51/00 主分类号 C23C14/12
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