发明名称 |
METHOD AND APPARATUS FOR VAPOR DEPOSITION |
摘要 |
<p>A method and apparatus for vapor deposition employing a conductive, three- dimensional, open cell, reticulated structure having a solid coating of a material that was previously vapor deposited thereon. The solid coating is vaporized to form a deposition gas. A carrier gas is flowed though the three-dimensional, open cell, reticulated structure to yield a controllable partial pressure of the deposition gas thereby forming a mixture of the carrier gas and the deposition gas. The mixture is delivered at a stable flow rate to a temperature controlled substrate. The deposition gas condenses on the surface of the temperature controlled substrate.</p> |
申请公布号 |
WO2012175126(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
WO2011EP60469 |
申请日期 |
2011.06.22 |
申请人 |
AIXTRON SE;LONG, MICHAEL;GERSDORFF, MARKUS;GOPI, BASKAR PAGADALA |
发明人 |
LONG, MICHAEL;GERSDORFF, MARKUS;GOPI, BASKAR PAGADALA |
分类号 |
C23C14/12;C23C14/22;C23C14/24;H01L51/00 |
主分类号 |
C23C14/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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