PURPOSE: A light emitting device is provided to improve the light extraction efficiency of a light emitting device by forming a plasmon layer which emits light by a surface plasmon resonance on the surface of a light emitting structure to suppress internal total reflection. CONSTITUTION: A light emitting structure(120) is located on a substrate(110) and includes a first conductive type semiconductor layer(122), an active layer(124), and a second conductive type semiconductor layer(126). A plasmon layer(130A) is formed on the second conductive type semiconductor layer. A conductive layer(140) is formed on the Plasmon layer. A first electrode(152) is formed on the first conductive type semiconductor layer. A second electrode(154) is formed on the conductive layer.
申请公布号
KR20120138903(A)
申请公布日期
2012.12.27
申请号
KR20110058328
申请日期
2011.06.16
申请人
LG INNOTEK CO., LTD.;KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION