The present disclosure provides a thermo-mechanically reliable copper TSV and a technique to form such TSV during BEOL processing. The TSV constitutes an annular trench which extends through the semiconductor substrate. The substrate defines the inner and outer sidewalls of the trench, which sidewalls are separated by a distance within the range of 5 to 10 microns. A conductive path comprising copper or a copper alloy extends within said trench from an upper surface of said first dielectric layer through said substrate. The substrate thickness can be 60 microns or less. A dielectric layer having interconnect metallization conductively connected to the conductive path is formed directly over said annular trench.
申请公布号
CA2828498(A1)
申请公布日期
2012.12.27
申请号
CA20122828498
申请日期
2012.06.19
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
ANDRY, PAUL S.;FAROOQ, MUKTA G.;HANNON, ROBERT;IYER, SUBRAMANIAN S.;KINSER, EMILY R.;TSANG, CORNELIA K.;VOLANT, RICHARD P.