发明名称 KIT FOR FORMING METAL ELECTRODE PROTECTION FILM, METAL ELECTRODE PROTECTION FILM AND FORMATION METHOD THEREFOR, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a kit for forming a metal electrode protection film which can prevent discoloration or blackening of a metal electrode, exhibits excellent atmospheric stability while retaining gas barrier properties, and exhibits excellent transparency causing no yellow discoloration or white turbidity or the like over time, and to provide a formation method therefor, and a semiconductor light-emitting device which can have a high luminance and a long life by using the metal electrode protection film. <P>SOLUTION: The kit for forming a metal electrode protection film at least has an alkoxysilane compound, an A liquid the content of which is 0.0001-0.005 molar equivalent for the alkoxysilane, and a B liquid containing a polymer which contains at least vinyl alcohol as a constitutional unit. The A liquid and the B liquid are mixed when used. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012256648(A) 申请公布日期 2012.12.27
申请号 JP20110127593 申请日期 2011.06.07
申请人 FUJIFILM CORP 发明人 KOITO NAOKI;IKEDA MORIHITO
分类号 H01L33/56 主分类号 H01L33/56
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