| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide stable electrical characteristics to a semiconductor device using an oxide semiconductor to achieve high reliability. <P>SOLUTION: In a transistor including an oxide semiconductor film, a metal oxide film having an antistatic function, which contacts the oxide semiconductor film and covers a source electrode and a drain electrode is formed, and a heat treatment is performed. By this heating process, an impurity such as hydrogen, moisture, a hydroxy group and a hydride is intentionally excluded from the oxide semiconductor film to make the oxide semiconductor film be high grade. Further, by providing the metal oxide film, a parasitic channel occurring on a back channel side of the oxide semiconductor film in the transistor is prevented. <P>COPYRIGHT: (C)2013,JPO&INPIT |
