| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit that achieves a reduced power consumption and a reduced operational delay. <P>SOLUTION: A plurality of sequential circuits in a storage circuit each have a transistor having a channel forming region comprising an oxide semiconductor, and a capacitive element having one electrode electrically connected to a node that is brought to a floating state when the transistor is turned off. The channel forming region of the transistor comprising the oxide semiconductor can provide the transistor with an extremely low off state current (leakage current). The transistor can thus be turned off in a period when a supply voltage is not supplied to the storage circuit to maintain in the period a constant or substantially constant potential at the node electrically connected with the one electrode of the capacitive element. Consequently, the above problem can be solved. <P>COPYRIGHT: (C)2013,JPO&INPIT |
