| 摘要 |
A transistor having an aluminum metal gate includes a substrate, a high-k gate dielectric layer, an aluminum metal gate and a source/drain region. The high-k gate dielectric layer is disposed on the substrate. The aluminum metal gate includes a work function tuning layer and an aluminum metal layer disposed orderly on the high-k gate dielectric layer, where the aluminum metal layer comprises a first aluminum metal layer and a second aluminum metal layer. Furthermore, the source/drain region is disposed in the substrate at each of two sides of the aluminum metal gate.
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