发明名称 |
MANUFACTURING METHOD FOR METAL GATE |
摘要 |
A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.
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申请公布号 |
US2012329261(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201113164781 |
申请日期 |
2011.06.21 |
申请人 |
WANG SHAO-WEI;WANG YU-REN;LIN CHIEN-LIANG;TENG WEN-YI;LU TSUO-WEN;CHEN CHIH-CHUNG;YEN YING-WEI;LIN YU-MIN;CHIEN CHIN-CHENG;CHEN JEI-MING;HSU CHUN-WEI;CHANG CHIA-LUNG;WU YI-CHING;CHAN SHU-YEN |
发明人 |
WANG SHAO-WEI;WANG YU-REN;LIN CHIEN-LIANG;TENG WEN-YI;LU TSUO-WEN;CHEN CHIH-CHUNG;YEN YING-WEI;LIN YU-MIN;CHIEN CHIN-CHENG;CHEN JEI-MING;HSU CHUN-WEI;CHANG CHIA-LUNG;WU YI-CHING;CHAN SHU-YEN |
分类号 |
H01L21/782;H01L21/28 |
主分类号 |
H01L21/782 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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