| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a rework method for a resist film including hydrophobic resin for ArF immersion lithography or the like, capable of preventing generation of a defect, such as resist residue adhering to a semiconductor substrate when the resist film is peeled off with organic solvent. <P>SOLUTION: The rework method for a resist film includes: a processing step of improving the hydrophilic property of a resist film including hydrophobic resin; a processing step of removing the resist film with improved hydrophilic property with organic solvent having polarities; and a processing step of forming a resist film again on a semiconductor substrate. As the processing step of improving the hydrophilic property, for example, heat treatment may be used after the resist film is irradiated with energy line, such as ultraviolet ray. <P>COPYRIGHT: (C)2013,JPO&INPIT |
