| 摘要 |
A method and apparatus for programming a phase-change memory cell. A bias voltage signal (VBL) is applied to the cell. A measurement portion (m) of this bias voltage signal has a profile which varies with time. A measurement (TM), which is dependent on a predetermined condition being satisfied, is then made. The predetermined condition is dependent on cell current during the measurement portion (m) of the bias voltage signal. A programming signal is generated in dependence on the measurement (TM), and the programming signal is applied to program the cell. |
