Method for bonding substrates for use in semiconductor device, involves cooling composite substrate to specific temperature below another temperature with defined cooling rate

摘要

A germanium layer (14) and aluminum-copper layer (15) are formed on substrates (11,12) respectively and are joined to form substrate composite such that they are in contact, when heated to first temperature below temperature of eutectic point of aluminum and germanium. The first temperature is maintained for first time period and composite substrate is heated to second temperature above temperature of eutectic point of aluminum and germanium at second heating rate. The composite substrate is cooled to third temperature below first temperature for cooling ramp with a defined cooling rate. Independent claims are included for the following: (1) semiconductor device; and (2) micro-electromechanical sensor.