| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a first and a second problems simultaneously, where the first problem is that a high temperature of 700°C or higher enables crystal growth and the second problem is a manufacturing method which prevents a pn junction end face from appearing at a cutting plane even if it is cut, while, if a semiconductor pn junction is cut, it appears at a cutting plane and becomes a leak path, while a highly airtight atmospheric air cut-off mechanism is required to grow a semiconductor crystal film on a continuous substrate which is drawn out from a roll. <P>SOLUTION: To manufacture an inexpensive and robust solar cell by laminating semiconductor films on a metal substrate without using a silicon substrate. For that purpose, the first invention, which is to grow a semiconductor silicon film by making an air-tight CVD reaction chamber by holding an iron plate with a ring-shaped protrusion, was made. The second invention, which is to laminate films by separating a junction with an insulator film so as not to expose a junction end outside when cutting the iron plate, was made. According to the present invention, which is to print a coating material at high temperature, continuous manufacturing of a solar cell of crystal semiconductor on an iron plate is possible. <P>COPYRIGHT: (C)2013,JPO&INPIT |
