发明名称 MASK FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a mask forming method for easily forming an etching mask on a surface of an antireflection film which covers a spherical photoelectric conversion element. <P>SOLUTION: In a mask forming method, an upper die 1 and lower die 2 are used. When the upper die 1 and lower die 2 are connected, a cavity corresponding to a contour of a spherical photoelectric conversion element E is defined, hollows 1b and 2b are formed on joint surfaces 1a and 2a of the upper die 1 and lower die 2 respectively, and projections and recesses are formed all over the surfaces of the hollows. A mask forming method comprises steps of: filling each recess formed on the hollows with an organic substance 7; connecting the upper and lower dies together so that the photoelectric conversion element covered with an antireflection film AR is held in the cavity and pressure-welding each projection formed on the hollows to the antireflection film; and transferring the organic substance to the surface of the antireflection film AR by heating the upper and lower dies. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012256707(A) 申请公布日期 2012.12.27
申请号 JP20110128718 申请日期 2011.06.08
申请人 ULVAC JAPAN LTD 发明人 TAKEI HIDEO;SATO MUNEYUKI;HIRAOKA KENSUKE
分类号 H01L31/04 主分类号 H01L31/04
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