| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser having high current constriction effect in which a current constriction layer can be formed without taking out a wafer by interrupting the crystal growth, and to provide a manufacturing method therefor. <P>SOLUTION: In a semiconductor laser 1 having a current constriction layer, the current constriction layer consists of an n++ junction layer 19 doped with n-type impurity atoms, an insulation layer 17, and a p++ junction layer 15 doped with p-type impurity atoms. The p++ junction layer 15 has a center part 15a thicker than a peripheral part 15b, and the n++ junction layer 19 comes into contact with the p++ junction layer 15 in the center part 15a to form a tunnel junction. The insulation layer 17 separates the n++ junction layer 19 and the p++ junction layer 15 in the peripheral part 15b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
