发明名称 |
GRAPHENE TRANSISTOR WITH A SELF-ALIGNED GATE |
摘要 |
A method of forming a transistor structure is provided. The method includes forming a graphene layer on an insulating layer; forming a stack of a first metal portion and a second metal portion over the graphene layer, wherein sidewalls of the first metal portion are vertically coincident with sidewalls of the second metal portion; and laterally offsetting the sidewalls of the first metal portion relative to the sidewalls of the second metal portion by a lateral distance.
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申请公布号 |
US2012329260(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201213602117 |
申请日期 |
2012.09.01 |
申请人 |
AVOURIS PHAEDON;FARMER DAMON B.;LIN YU-MING;ZHU YU;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AVOURIS PHAEDON;FARMER DAMON B.;LIN YU-MING;ZHU YU |
分类号 |
H01L21/336;B82Y40/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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