SEMICONDUCTOR STRUCTURE HAVING AN INTEGRATED QUADRUPLE-WALL CAPACITOR FOR EMBEDDED DYNAMIC RANDOM ACCESS MEMORY (EDRAM) AND METHOD TO FORM THE SAME

摘要

Semiconductor structures having integrated quadruple-wall capacitors for eDRAM and methods to form the same are described. For example, an embedded quadruple-wall capacitor includes a trench disposed in a first dielectric layer disposed above a substrate. The trench has a bottom and sidewalls. A quadruple arrangement of metal plates is disposed at the bottom of the trench, spaced apart from the sidewalls. A second dielectric layer is disposed on and conformal with the sidewalls of the trench and the quadruple arrangement of metal plates. A top metal plate layer is disposed on and conformal with the second dielectric layer.