FABRICATION OF ANTI-REFLECTIVE SILICON SURFACE USING METALLIC IONS

摘要

PURPOSE: A method for manufacturing an anti-reflective silicon wafer using metal ions is provided to reduce silicon costs by decreasing an etching speed of a silicon wafer to reduce an amount of silicon wafers. CONSTITUTION: Metal with a lower electron affinity than silicon is ionized in alkali solvents. The surface of a silicon wafer is irregularized by contacting the silicon wafer with solutions. The metal has higher reduction power than the silicon. The silicon wafer is contacted with the solutions at 40 to 80 degrees centigrade. The height of an uneven part on the surface of the silicon wafer is selectively controlled by controlling the temperature of the solutions.