| 摘要 |
<p>A micro-heater including a semiconductor substrate (100) having a cavity (130,150); an insulating layer (200) provided on an upper side of the semiconductor substrate and closing the cavity; and a heater element (400) embedded in a portion of the insulating layer above the cavity and including a metallic material. The insulating layer includes: a compressive stress film made of silicon oxide; and a tensile stress film made of silicon nitride. The tensile stress film has a thickness not less than that of the compressive stress film.</p> |
