Double-sided semiconductor structure and method for manufacturing the same

摘要

A semiconductor structure (100; 200; 300) comprising; a substrate (5; 302) of semiconductor material of a first type of conductivity; a first semiconductor layer (7) set in direct electrical contact with the substrate on a first side (2) of the substrate; a second semiconductor layer (8) set in direct electrical contact with the substrate on a second side (4) of the substrate; a first active electronic device (10; 303) formed in the first semiconductor layer (7); and a second active electronic device (12; 62; 305) formed in the second semiconductor layer (8).