| 摘要 |
PURPOSE: A CMOS image sensor and a manufacturing method thereof are provided to prevent an electric connection between photo diode layers by forming a photo diode layer on the upper side of an insulation layer formed with an STI(shallow trench isolation) process. CONSTITUTION: An insulation layer(102) is formed by etching a part of a semiconductor substrate(100). A device isolation layer(104) defines an active region. A photo diode layer(110) is formed on the upper side of the insulation layer. First and second impurity ion layers(112,114) are formed on both sides of the photo diode layer. A first contact(120) and a second contact(122) are connected to the first and second conductive impurity ion layers. A metal wire(130) for a reset electrode is connected to the first contact.
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