| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory cell and a nonvolatile semiconductor memory device that supply a current required for rewriting of data without increasing current supply capability of a transistor, wherein error writing and incorrect reading are prevented. SOLUTION: A terminal r1 of a variable resistive element R is connected to a bit line B and the other terminal r2 is connected to one terminal d1 of a diode D. Also the other terminal d2 of the diode D is connected to a bulk line BK. Out of terminals of a transistor T, a terminal t1 which constitutes a gate is connected to a word line W. A terminal t2 is connected to a source line S, and a terminal t3 is connected to any one terminal among the terminal d2 of the diode D, the terminal r1 or r2 of the variable resistive element R. COPYRIGHT: (C)2010,JPO&INPIT |
