| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable light emitting device having high insulation property and high resistance to pressure in spite of the thin thickness of an insulating film in a semiconductor device having a circuit constituted of a thin film transistor. SOLUTION: A dummy member is arranged near a convex portion with a large step, particularly around the intersection portion of wiring so as to alleviate unevenness of the insulating film formed thereon. The upper wiring and the lower wiring are arranged in a misaligned manner so as not to align the end portions of the upper wring and the lower wiring. COPYRIGHT: (C)2007,JPO&INPIT |
