Memory device correcting the effect of high-energy particle collisions

摘要

The device has a retention unit (MRET) for retaining single copy of stored value (Qd) in a memory cell (CM) during specified time. A detection unit (MDET) detects a change of state of the memory cell by comparing the stored value in the memory cell with the retained value in the retention unit. A management unit (MG) determines whether a change of state of the memory cell is detected due to collision of a high energy particle. A loading of the value stored in the retention unit in the memory cell is automatically controlled when the change of state of the memory cell is detected. An independent claim is also included for a method for automatically correcting effect of collision of high-energy particles. (125).