| 摘要 |
PURPOSE: A bipolar punch through semiconductor device and a manufacturing method thereof are provided to reduce electron-hole plasma in an on state by arranging a defective layer in an intersection between an anode buffer and an anode contact layer. CONSTITUTION: A first conductive drift layer(2) is formed on a cathode side(13). A second conductive anode layer(3) is formed on an anode side(14) opposite to the cathode side. The anode layer includes an anode contact layer(5) and an anode buffer layer(4). An anode electrode(7) is formed on the anode contact layer. A cathode layer(25) is formed under the first conductive drift layer. |
