ION SOURCE AND ION IMPLANTATION APPARATUS

摘要

PURPOSE: An ion source and an ion implantation apparatus are provided to form an ion beam of high current by forming one end portion of a cross section of the ion beam to be overlapped. CONSTITUTION: One or more cathodes are included inside each plasma generating container(1). The one or more cathodes arrange a top end portion protruded in the inner side of the plasma generating container on the location which does not contact plasma. A mass flow controller(7) individually controls flow rate of ionized gas introduced within the each plasma generating container. A slit-shaped opening part(11) is formed in the each plasma generating container. A drawing electrode draws out an ion beam of a ribbon shape having a cross section of a rectangular shape.