METHOD FOR FABRICATING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to implement high integration by overcoming the limit of a photolithography process and an etching process to form a fine hole. CONSTITUTION: An object layer(120) and a first material layer(130) are successively formed on a substrate(110). A plurality of patterns of a second material layer are formed on the first material layer in a first direction. A plurality of hard mask patterns(176a) are formed on the pattern of the second material layer and the first material layer in a second direction. A pattern of the first material layer is formed by etching the first material layer using the plurality of hard mask patterns and the pattern of the second material layer as an etch mask. A pattern of the object layer with a plurality of holes is formed by etching the object layer using the pattern of the first material layer as an etch mask.