摘要 |
<p>PURPOSE: A photoresist composition is provided to improve the dissolution of a polymer resin, and the resolution, the development contrast, and the photosensitivity of a photoresist film by using a glutaraldehyde-based novolak resin. CONSTITUTION: A photoresist composition includes 5-30 weight% of a novolak resin, 2-10 weight% of a diazide-based photosensitive compound, 0.1-10 weight% of a sensitivity enhancer, and remaining amount of an organic solvent. The novolak resin is the condensation polymer of a phenol compound and glutaraldehyde, and the weight average molecular weight of the novolak resin is in a range between 2,000 and 20,000. In the novolak resin, 2-50 parts by weight of the glutaraldehyde are used based on 100 parts by weight of the phenol compound. [Reference numerals] (AA) Embodiment 1; (BB) Embodiment 2; (CC) Embodiment 3; (DD) Comparative Embodiment 1; (EE) H/B = Skip; (FF) H/B = 130°C; (GG) H/B = 135°C</p> |
申请人 |
DONGJIN SEMICHEM CO., LTD. |
发明人 |
JEA, GAL EUN;KIM, DONG MIN;LEE, WON YOUNG;KIM, SEUNG KI;BYEON, JA HUN;KIM, BYUNG UK;PARK, JU KYUNG;JOO, SANG IL;HAHM, SUN MI;LEE, DOO YOUN;PARK, IL KYU;JUNG, KI HWA;KIM, KYUNG HO;HONG, WOO SUNG |