发明名称 Multiple seal ring structure
摘要 The present disclosure provides a method of fabricating a semiconductor device, the method including providing a substrate having a seal ring region and a circuit region, forming a first seal ring structure over the seal ring region, forming a second seal ring structure over the seal ring region and adjacent to the first seal ring structure, and forming a first passivation layer disposed over the first and second seal ring structures. A semiconductor device fabricated by such a method is also provided.
申请公布号 US8338917(B2) 申请公布日期 2012.12.25
申请号 US20100938272 申请日期 2010.11.02
申请人 YAUNG DUN-NIAN;LIU JEN-CHENG;LIN JENG-SHYAN;WANG WEN-DE;TSAI SHU-TING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YAUNG DUN-NIAN;LIU JEN-CHENG;LIN JENG-SHYAN;WANG WEN-DE;TSAI SHU-TING
分类号 H01L23/02;H01L21/71 主分类号 H01L23/02
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