发明名称 |
Defect monitoring in semiconductor device fabrication |
摘要 |
A method of forming a device is presented. The method includes providing a substrate containing at least a partially formed device thereon. The device comprises at least one defect site. A pixilated image of the defect site is acquired, and each pixel comprises a grey level value (GLV). Surrounding noises of the defect site is eliminated. A point of the image is identified as the center of the defect. A plurality of iterations to exclude outer edge pixels surrounding the center of the defect image is performed. The defect is categorized as a killer or non-killer defect. |
申请公布号 |
US8339449(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US20090537269 |
申请日期 |
2009.08.07 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
LIM BARBARA FONG CHIN;LAI KENG HENG;YANG TANYA;LIM VICTOR SENG KEONG;GN FANG HONG;HSIA LIANG CHOO |
分类号 |
H04N7/18 |
主分类号 |
H04N7/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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