| 摘要 |
An integrated circuit structure has a metal silicide layer formed on an n-type well region, a p-type guard ring formed on the n-type well region and encircling the metal silicide layer. The outer portion of the metal silicide layer extends to overlap the inner edge of the guard ring, and a Schottky barrier is formed at the junction of the internal portion of the metal silicide layer and the well region. A conductive contact is in contact with the internal portion and the outer portion of the metal silicide layer. |
