发明名称 |
Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same |
摘要 |
The present invention provides a method of producing a silicon carbide semiconductor substrate in which a silicon carbide buffer layer doped with germanium and a semiconductor device layer are sequentially laminated on the buffer layer, a silicon carbide semiconductor substrate obtained by the method and a silicon carbide semiconductor in which electrodes are disposed on the silicon carbide semiconductor substrate. |
申请公布号 |
US8338833(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US20060580978 |
申请日期 |
2006.10.16 |
申请人 |
SEKI AKINORI;TANI YUKARI;SHIBATA NORIYOSHI;TOYOTA JIDOSHA KABUSHIKI KAISHA;JAPAN FINE CERAMICS CENTER |
发明人 |
SEKI AKINORI;TANI YUKARI;SHIBATA NORIYOSHI |
分类号 |
H01L21/331;H01L31/0312;H01L21/04;H01L21/20;H01L21/205;H01L21/338;H01L29/167;H01L29/24;H01L29/737;H01L29/778;H01L29/812 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|