发明名称 Method of manufacturing a semiconductor chip including a semiconductor substrate and a through via provided in a through hole
摘要 A semiconductor chip includes a semiconductor substrate, a through via provided in a through hole that passes through the semiconductor substrate, insulating layers laminated on the semiconductor substrate, a multi-layered wiring structure having a first wiring pattern and a second wiring pattern, and an external connection terminal provided on an uppermost layer of the multi-layered wiring structure, wherein the through via and the external connection terminal are connected electrically by the second wiring pattern.
申请公布号 US8338289(B2) 申请公布日期 2012.12.25
申请号 US20100901028 申请日期 2010.10.08
申请人 MURAYAMA KEI;HIGASHI MITSUTOSHI;SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 MURAYAMA KEI;HIGASHI MITSUTOSHI
分类号 H01L21/4763 主分类号 H01L21/4763
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