发明名称 |
Interconnect structures with ternary patterned features generated from two lithographic processes |
摘要 |
A method for fabricating an interconnect structure for interconnecting a semiconductor substrate to have three distinct patterned structures such that the interconnect structure provides both a low k and high structural integrity. The method includes depositing an interlayer dielectric onto the semiconductor substrate, forming a first pattern within the interlayer dielectric material by a first lithographic process that results in both via features and ternary features being formed in the interconnect structure. The method further includes forming a second pattern within the interlayer dielectric material by a second lithographic process to form line features within the interconnect structure. Hence the method forms the three separate distinct patterned structures using only two lithographic processes for each interconnect level. |
申请公布号 |
US8338952(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US20090538114 |
申请日期 |
2009.08.08 |
申请人 |
COLBURN MATTHEW E.;HUANG ELBERT;NITTA SATYANARAYANA V.;PURUSHOTHAMAN SAMPATH;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COLBURN MATTHEW E.;HUANG ELBERT;NITTA SATYANARAYANA V.;PURUSHOTHAMAN SAMPATH |
分类号 |
H01L21/70;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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