发明名称 |
Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by corner rounding at the top of the gate electrode |
摘要 |
In MOS transistor elements, a strain-inducing semiconductor alloy may be embedded in the active region with a reduced offset from the channel region by applying a spacer structure of reduced width. In order to reduce the probability of creating semiconductor residues at the top area of the gate electrode structure, a certain degree of corner rounding of the semiconductor material may be introduced, which may be accomplished by ion implantation prior to epitaxially growing the strain-inducing semiconductor material. This concept may be advantageously combined with the provision of sophisticated high-k metal gate electrodes that are provided in an early manufacturing stage. |
申请公布号 |
US8338892(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US20100893808 |
申请日期 |
2010.09.29 |
申请人 |
KRONHOLZ STEPHAN;BOSCHKE ROMAN;WIATR MACIEJ;JAVORKA PETER;GLOBALFOUNDRIES INC. |
发明人 |
KRONHOLZ STEPHAN;BOSCHKE ROMAN;WIATR MACIEJ;JAVORKA PETER |
分类号 |
H01L29/78;H01L21/8234;H01L21/8238 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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