发明名称 |
Silicided trench contact to buried conductive layer |
摘要 |
A trench contact silicide is formed on an inner wall of a contact trench that reaches to a buried conductive layer in a semiconductor substrate to reduce parasitic resistance of a reachthrough structure. The trench contact silicide is formed at the bottom, on the sidewalls of the trench, and on a portion of the top surface of the semiconductor substrate. The trench is subsequently filled with a middle-of-line (MOL) dielectric. A contact via may be formed on the trench contact silicide. The trench contact silicide may be formed through a single silicidation reaction with a metal layer or through multiple silicidation reactions with multiple metal layers. |
申请公布号 |
US8338265(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US20080269069 |
申请日期 |
2008.11.12 |
申请人 |
COOLBAUGH DOUGLAS D.;JOHNSON JEFFREY B.;LINDGREN PETER J.;LIU XUEFENG;NAKOS JAMES S.;ORNER BRADLEY A.;RASSEL ROBERT M.;SHERIDAN DAVID C.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH DOUGLAS D.;JOHNSON JEFFREY B.;LINDGREN PETER J.;LIU XUEFENG;NAKOS JAMES S.;ORNER BRADLEY A.;RASSEL ROBERT M.;SHERIDAN DAVID C. |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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