发明名称 Sequence detection for flash memory with inter-cell interference
摘要 A memory integrated circuit (IC) includes a read module and a sequence detector module. The read module reads S memory cells (cells) located along one of a bit line and a word line and generates S read signals, where S is an integer greater than 1. The sequence detector module detects a data sequence based on the S read signals and reference signals. The data sequence includes data stored in the S cells. Each of the reference signals includes an interference-free signal associated with one of the S cells and an interference signal associated with another of the S cells that is adjacent to the one of the S cells.
申请公布号 US8339874(B2) 申请公布日期 2012.12.25
申请号 US201113335037 申请日期 2011.12.22
申请人 YANG XUESHI;WU ZINING;MARVELL WORLD TRADE LTD. 发明人 YANG XUESHI;WU ZINING
分类号 G11C7/22 主分类号 G11C7/22
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