发明名称 |
Simplified pitch doubling process flow |
摘要 |
A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces. The method further comprises selectively etching photoresist material.
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申请公布号 |
US8338959(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US201113229898 |
申请日期 |
2011.09.12 |
申请人 |
NIROOMAND ARDAVAN;ZHOU BAOSUO;ALAPATI RAMAKANTH;MICRON TECHNOLOGY, INC. |
发明人 |
NIROOMAND ARDAVAN;ZHOU BAOSUO;ALAPATI RAMAKANTH |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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