发明名称 |
Monolithic microwave integrated circuit |
摘要 |
A monolithic microwave integrated circuit structure having a semiconductor substrate structure with a plurality of active devices and a microwave transmission line having an input section, an output section and a interconnecting section electrically interconnecting the active devices on one surface and a metal layer on an opposite surface overlaying the interconnection section and absent from overlaying at least one of the input section and the output section.
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申请公布号 |
US8339790(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US20100879044 |
申请日期 |
2010.09.10 |
申请人 |
REZA SHAHED;SWIDERSKI EDWARD;ALM ROBERTO W.;RAYTHEON COMPANY |
发明人 |
REZA SHAHED;SWIDERSKI EDWARD;ALM ROBERTO W. |
分类号 |
H05K7/20 |
主分类号 |
H05K7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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