| 摘要 |
A magnetoresistive element of an aspect of the present invention including a lower electrode provided on an insulating layer on a semiconductor substrate, a first ferromagnetic layer provided on the lower electrode, a first tunnel barrier layer provided on the first ferromagnetic layer, a second ferromagnetic layer provided on the first tunnel barrier layer, and an upper electrode provided on the second ferromagnetic layer, wherein the upper electrode has a hexagonal cross-sectional shape, and a maximum size of the upper electrode in a first direction is larger than a size of the first tunnel barrier layer in the first direction, the first direction being horizontal relative to a surface of the semiconductor substrate. |
