发明名称 |
Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the same |
摘要 |
Provided may be a slurry composition for chemical mechanical polishing (CMP) and a CMP method using the same. For example, the slurry composition may include a first polishing inhibitor including at least one of PO43− or HPO42− and a second polishing inhibitor, which may be a C2-C10 hydrocarbon compound having —SO3H or —OSO3H. By using the slurry composition for CMP and a CMP method using the same, increased selectivity to SiN may be obtained. |
申请公布号 |
US8338300(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US20080219985 |
申请日期 |
2008.07.31 |
申请人 |
LEE JONG-WON;HONG CHANG-KI;HAN SANG-YEOB;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG-WON;HONG CHANG-KI;HAN SANG-YEOB |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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