发明名称 Semiconductor device
摘要 A semiconductor device comprises a transistor comprising a gate, a source, a drain, and a gate insulating layer, and an auxiliary line formed over the drain and electrically insulated from the drain. During a turn-off operation of the transistor, voltage to increase a resistance of the drain is supplied to the auxiliary line.
申请公布号 US8338883(B2) 申请公布日期 2012.12.25
申请号 US20100872888 申请日期 2010.08.31
申请人 PARK SUN MI;HYNIX SEMICONDUCTOR INC. 发明人 PARK SUN MI
分类号 H01L29/792 主分类号 H01L29/792
代理机构 代理人
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