发明名称 |
Processes for curing silicon based low-k dielectric materials |
摘要 |
Processes for curing silicon based low k dielectric materials generally includes exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so to change a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure. Also disclosed herein are silicon base low k dielectric materials substantially free of sub-oxidized SiO species. |
申请公布号 |
US8338315(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US20080037222 |
申请日期 |
2008.02.26 |
申请人 |
MOORE DARREN L.;WALDFRIED CARLO;RAJAGOPALAN GANESH;AXCELIS TECHNOLOGIES, INC. |
发明人 |
MOORE DARREN L.;WALDFRIED CARLO;RAJAGOPALAN GANESH |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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