发明名称 Semiconductor module, method of manufacturing semiconductor module, and mobile device
摘要 An electrode for a semiconductor device is formed on the mounting surface (particularly, the outer periphery thereof) of a semiconductor substrate in a semiconductor module. In order to secure a large gap between the electrodes, an insulating layer is formed on the electrode. Also formed are a plurality of bumps penetrating the insulating layer and connected to the electrode, and a rewiring pattern integrally formed with the bumps. The rewiring pattern includes a bump area and a wiring area extending contiguously with the bump area. The insulating layer is formed to have a concave upper surface in an interval between the bumps, and the wiring area of the rewiring pattern is formed to fit that upper surface. The wiring area of the rewiring pattern is formed to be depressed toward the semiconductor substrate in relation to the bump area of the rewiring pattern.
申请公布号 US8338946(B2) 申请公布日期 2012.12.25
申请号 US20100961171 申请日期 2010.12.06
申请人 YANASE YASUYUKI;OKAYAMA YOSHIO;SHIBATA KIYOSHI;INOUE YASUNORI;MIZUHARA HIDEKI;USUI RYOSUKE;YAMAMOTO TETSUYA;YOSHII MASURAO;SANYO ELECTRIC CO., LTD. 发明人 YANASE YASUYUKI;OKAYAMA YOSHIO;SHIBATA KIYOSHI;INOUE YASUNORI;MIZUHARA HIDEKI;USUI RYOSUKE;YAMAMOTO TETSUYA;YOSHII MASURAO
分类号 H01L23/48;H01L29/40 主分类号 H01L23/48
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