发明名称 |
Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants |
摘要 |
A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength. |
申请公布号 |
US8338316(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US201113111306 |
申请日期 |
2011.05.19 |
申请人 |
PARIHAR VIJAY;BENCHER CHRISTOPHER DENNIS;KANURI RAJESH;MENEZES MARLON E.;APPLIED MATERIALS, INC. |
发明人 |
PARIHAR VIJAY;BENCHER CHRISTOPHER DENNIS;KANURI RAJESH;MENEZES MARLON E. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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