SEMICONDUCTOR MEMORY DEVICE HAVING THREE-DIMENSIONAL DOUBLE CROSS POINT ARRAY

摘要

PURPOSE: A semiconductor memory device having a three-dimensional double cross point array and a manufacturing method thereof are provided to reduce pitches by half by forming two metal layers to be vertically crossed each other. CONSTITUTION: Three conducting wires define two cross points. Two memory cells(1a,1b) are arranged on two cross points. Three conducting wires comprise a first conducting wire(100), a second conducting wire(200), and a third conducting wire(500). First and second conducting wires are parallelly extended in a first horizontal direction. The third conducting wire is extended in a second horizontal direction which is crossed with the first horizontal direction.