发明名称 STRUCTURE D'ENCAPSULATION D'UN MICRO-DISPOSITIF COMPORTANT UN MATÉRIAU GETTER
摘要 <p>The structure (100) has a cavity (106) in which a micro-device (104) is provided. The cavity is bounded by substrate (102) and another substrate (108) that is integral with the former substrate through a bonding interface (110) consisting of metal or dielectric material. A main face (112) of the latter substrate facing the former substrate is covered with a getter material layer (114). The interface is provided between the former substrate and the layer. The latter substrate forms a continuous cap. The layer has a thickness between about 100 nanometers and 2 micrometers. An independent claim is also included for a method for producing an encapsulating structure of a micro-device.</p>
申请公布号 FR2967302(B1) 申请公布日期 2012.12.21
申请号 FR20100059248 申请日期 2010.11.09
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 BAILLIN XAVIER;FERRANDON CHRISTINE
分类号 H01L23/29;H01L23/18 主分类号 H01L23/29
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