MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method for a semiconductor device is provided to perform a high speed response by having an oxide semiconductor film including a low resistance region in which a channel forming region is inserted in a channel length direction. CONSTITUTION: An oxide semiconductor film(403) is formed. An insulating layer containing a metal element is formed on the oxide semiconductor film. Low resistance regions are formed on the oxide semiconductor film. The low resistance region is formed in order to insert a channel forming region in a channel length direction. The low resistance regions have lower resistance than the channel forming region and contain a dopant. The low resistance regions are formed by passing through the insulating layer and introducing the dopant to the oxide semiconductor film.