PURPOSE: A microgrid gate and a triode including the same are provided to control deformation by forming a grid frame in which a grid hole passing through the bottom of a groove is formed in a silicon plate. CONSTITUTION: A silicon plate(110) is comprised in order to form a groove on a first side. The silicon plate comprises a grid frame in which a grid hole passing through the bottom of a groove is formed. A silicon oxide layer(140) is formed on the surface of the silicon plate. A metal layer(150) is deposited on the upper side of the silicon oxide layer. The metal layer is deposited on a second side of the silicon plate and the side of the grid frame.
申请公布号
KR101214431(B1)
申请公布日期
2012.12.21
申请号
KR20110092465
申请日期
2011.09.14
申请人
KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE
发明人
KIM, JAE HONG;JEON, SEOK GY;KIM, JUNG IL;KIM, GEUN JU;HEO, DU CHANG